Effects of the magnetic field and gate voltage on a quantum Hall bar in quantum Hall regime

28212

Discovery of the quantum Hall effect has opened a new era in the semiconductor physics. The models which are put forward to explain the quantum Hall effect are focused on the physics of compressible and incompressible strips formed by partially and fully filled of Landau levels. In this study, the dependence of incompressible strips to the magnetic field applied to the quantum Hall bar and the gate voltages confined the quantum Hall bar are investigated. In order to investigate the incompressible strips theoretically, Thomas-Fermi approximations can be used in the self-consistent calculations. Self-consistent calculations require a very long computational time so that multigrid method is used to accelerate the calculations used in the solution of the Poisson equation in this study.

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Quantum Hall Bar , Multigrid method , Thomas , Fermi approximation , Poisson equation

Erciyes University Journal Of The Institute Of Science an‎d Technology

239

Erciyes University Journal Of The Institute Of Science an‎d Technology