مرکز منطقه ای اطلاع رساني علوم و فناوري - Characterization and preparation of transparent NiO thin films growth by electrochemical deposition technique

Abstract :

Transparent NiO thin films were growth in different cathodic currents by using electrochemical deposition technique on ITO substrates. After deposition, thin films were annealed at 350° for 2 hours in air environment. X-ray diffraction (XRD) patterns indicated that thin films growth on substrates have a single-phased cubic polycrystalline structure with orientations of (111), (200) and (222). Band gap of NiO films growth by using absorption measurements were calculated as 2.85 eV. The data obtained from the measurements of photoluminescence (PL) carried out between 310-800 nm, indicated that NiO thin films have three emission peaks. NiO thin films growth were investigated from the point of surface morphology by scanning electron microscopy (SEM) and atomic force microscopy (AFM). It has been revealed that there are the vibrational modes of Ni-O bonds in the formation of the films with Fourier transform infrared spectroscopy (FTIR) analysis and showed that the films have an average optical transmittance between 50% and 80% in the visible region. XPS measurements were studied to examine the chemical features as chemical bonding states of the NiO films deposited depending on Ni/O orientation and different conditions. Raman measurements displayed that the growth NiO films have not a stoichiometric nature. As seen, it has been understood that the density and morphology of NiO particles are very important in the formation optoelectronic devices.