A high-power W-band pseudomorphic InGaAs channel PHEMT

Author

Gaquiere, C. ; Grunenputt, J. ; Jambon, D. ; Delos, E. ; Ducatteau, D. ; Werquin, M. ; Theron, D. ; Fellon, P.

Author_Institution

Dept. Hyperfrequences et Semiconducteurs, UMR CNRS, Villeneuve d´Ascq, France

Volume

26

Issue

8

fYear

2005

Firstpage

533

Lastpage

534

Abstract

We present the process and power microwave measurements of 0.07-μm Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.22/Ga/sub 0.78/As pseudomorphic high-electron mobility transistors (PHEMTs). These devices are passivated and exhibit a Ft of 125 GHz, a current density of 750 mA/mm associated to a high breakdown voltage of 4 V at open channel. Careful power measurements performed at 94 GHz have allowed to demonstrate for the first time an output power of 876 mW/mm associated with 5.7-dB power gain and a power added efficiency of 29% on a PHEMT on GaAs substrate.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; millimetre wave field effect transistors; power HEMT; 0.07 micron; 125 GHz; 29 percent; 4 V; 5.7 dB; 94 GHz; Al/sub 0.25/Ga/sub 0.75/As-In/sub 0.22/Ga/sub 0.78/As; W-band PHEMT; breakdown voltage; compound semiconductor; current density; high-power PHEMT; power added efficiency; power microwave measurements; pseudomorphic high-electron mobility transistors; Current density; HEMTs; Indium gallium arsenide; MODFETs; Microwave devices; Microwave measurements; Microwave transistors; PHEMTs; Performance evaluation; Power measurement; Compound semiconductor; InGaAs; W-band; high-electron mobility transistors (HEMTs); microwave; power; pseudomorphic;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.852520

Filename

1468213