Title :
Thinner liquid phase deposited oxide for polysilicon thin-film transistors
Author :
Yeh, Ching-Fa ; Lin, Shyue-Shyh ; Fan, Ching-Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT´s), a thinner oxide is developed by liquid-phase deposition with a small quantity of H/sub 2/O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future.<>
Keywords :
MOSFET; elemental semiconductors; insulating thin films; semiconductor technology; silicon; thin film transistors; H/sub 2/O; Si-SiO/sub 2/; electric characteristics; gate insulator thickness scaling; high-quality oxide; liquid phase deposited oxide; liquid-phase deposition; oxide thickness reduction; poly-Si TFT; polysilicon TFT; thin-film transistors; Dielectric liquids; Electric breakdown; Electric variables; Insulation; Optical films; Refractive index; Sputtering; Temperature; Thin film transistors; Water;
Journal_Title :
Electron Device Letters, IEEE
