DocumentCode
1000116
Title
Thinner liquid phase deposited oxide for polysilicon thin-film transistors
Author
Yeh, Ching-Fa ; Lin, Shyue-Shyh ; Fan, Ching-Lin
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
16
Issue
11
fYear
1995
Firstpage
473
Lastpage
475
Abstract
To scale down the gate insulator thickness of polysilicon thin-film transistors (poly-Si TFT´s), a thinner oxide is developed by liquid-phase deposition with a small quantity of H/sub 2/O added, producing a rather high-quality oxide. Poly-Si TFT with such a thin oxide reveals good performances in electric characteristics. Thus, the novel thinner oxide is a good candidate as a poly-Si TFT gate insulator in the near future.<>
Keywords
MOSFET; elemental semiconductors; insulating thin films; semiconductor technology; silicon; thin film transistors; H/sub 2/O; Si-SiO/sub 2/; electric characteristics; gate insulator thickness scaling; high-quality oxide; liquid phase deposited oxide; liquid-phase deposition; oxide thickness reduction; poly-Si TFT; polysilicon TFT; thin-film transistors; Dielectric liquids; Electric breakdown; Electric variables; Insulation; Optical films; Refractive index; Sputtering; Temperature; Thin film transistors; Water;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.468271
Filename
468271
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