• DocumentCode
    1000126
  • Title

    Monolayer metallic nanotube interconnects: promising candidates for short local interconnects

  • Author

    Naeemi, Azad ; Meindl, J.D.

  • Author_Institution
    Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    26
  • Issue
    8
  • fYear
    2005
  • Firstpage
    544
  • Lastpage
    546
  • Abstract
    Mono- or bi-layer metallic single-wall carbon nanotube interconnects have lateral capacitances more than four times smaller than those of copper interconnects. The resistance and time-of-flight of these monolayer nanotubes would be larger than that of copper interconnects. For short lengths, however, driver resistance is quite dominant, and latency is determined by interconnect capacitance. Monolayer nanotube interconnects are therefore promising candidates for local interconnects. The average capacitance per unit length of these nanotube interconnects can be 50% smaller than that of copper interconnects and that leads to significant saving in power dissipation.
  • Keywords
    carbon nanotubes; integrated circuit interconnections; nanotube devices; bi-layer metallic single-wall carbon nanotube interconnects; integrated circuit interconnections; molecular electronics; monolayer metallic single-wall carbon nanotube interconnects; nanotube devices; short local interconnects; Carbon nanotubes; Copper; Delay; Electrons; Inductance; Kinetic theory; Light scattering; Particle scattering; Power dissipation; Quantum capacitance; Interconnections; modeling; molecular electronics; quantum wires;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.852744
  • Filename
    1468217