DocumentCode
1000126
Title
Monolayer metallic nanotube interconnects: promising candidates for short local interconnects
Author
Naeemi, Azad ; Meindl, J.D.
Author_Institution
Georgia Inst. of Technol., Atlanta, GA, USA
Volume
26
Issue
8
fYear
2005
Firstpage
544
Lastpage
546
Abstract
Mono- or bi-layer metallic single-wall carbon nanotube interconnects have lateral capacitances more than four times smaller than those of copper interconnects. The resistance and time-of-flight of these monolayer nanotubes would be larger than that of copper interconnects. For short lengths, however, driver resistance is quite dominant, and latency is determined by interconnect capacitance. Monolayer nanotube interconnects are therefore promising candidates for local interconnects. The average capacitance per unit length of these nanotube interconnects can be 50% smaller than that of copper interconnects and that leads to significant saving in power dissipation.
Keywords
carbon nanotubes; integrated circuit interconnections; nanotube devices; bi-layer metallic single-wall carbon nanotube interconnects; integrated circuit interconnections; molecular electronics; monolayer metallic single-wall carbon nanotube interconnects; nanotube devices; short local interconnects; Carbon nanotubes; Copper; Delay; Electrons; Inductance; Kinetic theory; Light scattering; Particle scattering; Power dissipation; Quantum capacitance; Interconnections; modeling; molecular electronics; quantum wires;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2005.852744
Filename
1468217
Link To Document