• DocumentCode
    1000164
  • Title

    Gain and saturation power of resonant AlGaAs laser amplifier

  • Author

    Kobayashi, Soichi ; Kimura, Tatsuya

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    16
  • Issue
    6
  • fYear
    1980
  • Firstpage
    230
  • Lastpage
    232
  • Abstract
    Results of gain measurements on an AlGaAs laser amplifier with an optical isolator are reported. The maximum net gain was 25 dB when input power was less than ¿40 dBm. By measuring internal loss, a saturation parameter was estimated to be 6 mW.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; gain; input power -40 dBm; integrated optics semiconductor lasers; internal loss; maximum net gain 25 dB; optical isolator; resonant AlGaAs laser amplifier; saturation power;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19800165
  • Filename
    4249610
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000164