Title :
Gain and saturation power of resonant AlGaAs laser amplifier
Author :
Kobayashi, Soichi ; Kimura, Tatsuya
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Results of gain measurements on an AlGaAs laser amplifier with an optical isolator are reported. The maximum net gain was 25 dB when input power was less than ¿40 dBm. By measuring internal loss, a saturation parameter was estimated to be 6 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; semiconductor junction lasers; gain; input power -40 dBm; integrated optics semiconductor lasers; internal loss; maximum net gain 25 dB; optical isolator; resonant AlGaAs laser amplifier; saturation power;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800165
