Semiconductor laser amplifier as optical switching gate

Author

Ehrhardt, Armin ; Eiselt, Michael ; Grossopf, G. ; Kuller, Lothar ; Ludwig, Reinhold ; Pieper, Wilhelm ; Schnabel, Ronald ; Weber, Hans G.

Author_Institution

Heinrich-Herta-Inst. fuer Nachrichtentech. Berlin GmbH, Germany

Volume

11

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1287

Lastpage

1295

Abstract

The properties of a semiconductor laser amplifier as optical switching gate are investigated. Particular attention is paid to gain, contrast ratio, and switching time of the device. These properties are studied experimentally and theoretically with respect to the injection current, optical input power, and cavity resonances. The experimental arrangements and the theoretical method are described. As an example of the various applications of semiconductor laser amplifier gates, packet switching experiments with self-routing, employing cascaded switching gates, are reported. In a theoretical analysis the restrictions that the properties of semiconductor laser amplifier gates impose on a larger switching system consisting of many such gates are investigated

Keywords

optical switches; packet switching; semiconductor lasers; semiconductor switches; cascaded switching gates; cavity resonances; contrast ratio; gain; injection current; optical input power; optical switching gate; packet switching; self-routing; semiconductor laser amplifier; semiconductor laser amplifier gates; switching system; switching time; Laser applications; Laser theory; Optical packet switching; Packet switching; Power semiconductor switches; Quantum cascade lasers; Resonance; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.254087

Filename

254087