• DocumentCode
    1000224
  • Title

    Hot carrier-induced degradation in bulk FinFETs

  • Author

    Kim, Sang-Yun ; Lee, Jong Ho

  • Author_Institution
    Sch. of Electron. & Electr. Eng., Kyungpook Nat. Univ., Daegu, South Korea
  • Volume
    26
  • Issue
    8
  • fYear
    2005
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    Hot-carrier effects in n-channel bulk FinFETs were investigated for the first time. For VDS larger than about 1.4 V, stress bias condition of VGS=VDS showed shorter lifetime than that of VGS=VDS/2 stress condition. The hot-carrier-induced degradation was checked by changing the fin body width, and increased with decreasing the width. Bulk FinFETs with (100) side surface orientation showed less gmmax degradation than that of the device with [110] side surface. The supply voltage which meets 10 years lifetime at the stress bias condition of VGS=VDS was 1.2 V.
  • Keywords
    field effect transistors; hot carriers; semiconductor device reliability; 1.2 V; hot carrier effects; hot-carrier-induced degradation; n-channel bulk FinFET; stress bias condition; CMOS technology; Degradation; FinFETs; Hot carrier effects; Hot carriers; Scalability; Silicon compounds; Silicon on insulator technology; Stress; Transconductance; Bulk FinFET; degradation; hot-carrier effects;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.852534
  • Filename
    1468224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000224