Intrinsic mobility evaluation of high-κ gate dielectric transistors using pulsed Id-Vg

A novel intrinsic mobility extraction methodology for high-κ gate stacks that only requires a capacitance-voltage and pulsed I_d-V_g measurement is demonstrated on SiO₂ and high-κ gate dielectric transistors and is benchmarked to other reported mobility extraction techniques. Fast transient charging effects in high-κ gate stacks are shown to cause the mobility extracted using conventional dc-based techniques to be lower than the intrinsic mobility.