Title :
High-gain, high-speed InP/InGaAs double-heterojunction bipolar transistors with a step-graded base-collector heterojunction
Author :
Willén, Bo ; Westergren, Urban ; Asonen, Harry
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
We show that by using InP for the emitter and collector layers, and a thin high-doped base layer, it is possible to achieve both a high DC current gain and a high maximum frequency of oscillation. We have fabricated InP/InGaAs double heterojunction bipolar transistors (DHBT´s) with cutoff frequencies f/sub T/ and f/sub max/ of 92 and 95 GHz, respectively, with a DC current gain of over 100. The maximum cutoff frequencies were 107 and 104 GHz.<>
Keywords :
III-V semiconductors; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; molecular beam epitaxial growth; 92 to 107 GHz; DHBT; GSMBE; HBT fabrication; InP collector layer; InP emitter layer; InP-InGaAs; MBE growth; double-heterojunction bipolar transistors; high DC current gain; high maximum oscillation frequency; step-graded base-collector heterojunction; thin high-doped base layer; Bipolar transistors; DH-HEMTs; Electrons; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Temperature measurement;
Journal_Title :
Electron Device Letters, IEEE
