DocumentCode
1000377
Title
Lateral pnp GaAs bipolar transistor prepared by ion implantation
Author
Kr¿¿utle, H. ; Narozny, P. ; Beneking, H.
Author_Institution
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Volume
18
Issue
6
fYear
1982
Firstpage
259
Lastpage
260
Abstract
A lateral pnp bipolar transistor structure has been realised in n-GaAs material using ion implantation. Be ions have been implanted to form the emitter and collector. Proton implantation has been used to reduce the area of the parasitic emitter-substrate diode. First results of a transistor with a current gain of 0.5 are shown.
Keywords
III-V semiconductors; bipolar transistors; gallium arsenide; ion implantation; Be ion implantation; GaAs bipolar transistor; ion implantation; lateral p-n-p bipolar transistor; parasitic emitter-substrate diode; proton implantation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820178
Filename
4249635
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