• DocumentCode
    1000407
  • Title

    Low-threshold current CW operation of multiple infil buried heterostructure 1.3 ¿m GaInAsP lasers

  • Author

    Plastow, R. ; Harding, M. ; Griffith, Isaac ; Carter, A.C. ; Goodfellow, R.C.

  • Author_Institution
    Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
  • Volume
    18
  • Issue
    6
  • fYear
    1982
  • Firstpage
    262
  • Lastpage
    263
  • Abstract
    1.3 ¿m buried-heterostructure lasers with CW threshold currents as low as 19 mA have been fabricated using a multilayer infil structure. This technique significantly reduces the alignment tolerances necessary for low-threshold BH laser fabrication. Single transverse and longitudinal mode operation is observed for active layer widths below 3.5 ¿m.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.3 microns wavelength; CW threshold currents; GaInAsP lasers; buried-heterostructure lasers; longitudinal mode operation; multilayer infill structure; semiconductor laser; transverse mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820180
  • Filename
    4249637
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000407