Title :
Modification of ICCG method for application to semiconductor device simulators
Author :
Wada, Tomotaka ; Dang, R.L.M.
Author_Institution :
Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Abstract :
A high-speed iterative solution method for linear equations is proposed, which consists essentially of modifying the ICCG method to enable a processing of slightly asymmetrical coefficient matrices usually encountered in simulation problems pertaining to semiconductor devices. The new algorithm, applied to several two- and three-dimensional device simulators, has brought about a remarkable reduction in computation time.
Keywords :
digital simulation; semiconductor device models; ICCG method; asymmetrical coefficient matrices; high-speed iterative solution method; incomplete Choleski-decomposition and conjugate gradient; semiconductor device simulators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820182
