DocumentCode
1000427
Title
Modification of ICCG method for application to semiconductor device simulators
Author
Wada, Tomotaka ; Dang, R.L.M.
Author_Institution
Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Volume
18
Issue
6
fYear
1982
Firstpage
265
Lastpage
266
Abstract
A high-speed iterative solution method for linear equations is proposed, which consists essentially of modifying the ICCG method to enable a processing of slightly asymmetrical coefficient matrices usually encountered in simulation problems pertaining to semiconductor devices. The new algorithm, applied to several two- and three-dimensional device simulators, has brought about a remarkable reduction in computation time.
Keywords
digital simulation; semiconductor device models; ICCG method; asymmetrical coefficient matrices; high-speed iterative solution method; incomplete Choleski-decomposition and conjugate gradient; semiconductor device simulators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820182
Filename
4249639
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