Title :
Three-dimensional simulation of inverse narrow-channel effect
Author :
Shigyo, N. ; Konaka, M. ; Dang, R.L.M.
Author_Institution :
Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
Abstract :
Based on a three-dimensional numerical analysis, it is shown that narrow-width MOSFETs of the BOX structure1 exhibit an `inverse¿ narrow-channel effect whereby their threshold voltages become lower and lower with decreasing channel width. The phenomenon is attributed to a pronounced enhancement of the channel edge region due to a crowding of the fringing field.
Keywords :
insulated gate field effect transistors; semiconductor device models; BOX structure; MOSFET; fringing field; inverse narrow-channel effect; semiconductor device model; simulation; three-dimensional numerical analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820187
