• DocumentCode
    1000477
  • Title

    Three-dimensional simulation of inverse narrow-channel effect

  • Author

    Shigyo, N. ; Konaka, M. ; Dang, R.L.M.

  • Author_Institution
    Toshiba Corporation, Integrated Circuits Laboratory, Toshiba Research & Development Center, Kawasaki, Japan
  • Volume
    18
  • Issue
    6
  • fYear
    1982
  • Firstpage
    274
  • Lastpage
    275
  • Abstract
    Based on a three-dimensional numerical analysis, it is shown that narrow-width MOSFETs of the BOX structure1 exhibit an `inverse¿ narrow-channel effect whereby their threshold voltages become lower and lower with decreasing channel width. The phenomenon is attributed to a pronounced enhancement of the channel edge region due to a crowding of the fringing field.
  • Keywords
    insulated gate field effect transistors; semiconductor device models; BOX structure; MOSFET; fringing field; inverse narrow-channel effect; semiconductor device model; simulation; three-dimensional numerical analysis;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820187
  • Filename
    4249644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000477