Title :
A novel method to characterize parasitic capacitances in MOSFET´s
Author :
Ricco, B. ; Versari, R. ; Esseni, D.
Author_Institution :
Dept. of Electron., Bologna Univ., Italy
Abstract :
A new technique exploiting the body effect is presented to separate intrinsic from extrinsic capacitances in submicron MOSFET´s. The method has been validated using 2D numerical simulations and results obtained with transistors fabricated with 0.7 μm CMOS technology are presented.
Keywords :
MOSFET; capacitance; capacitance measurement; semiconductor device testing; 0.7 micron; 2D numerical simulations; CMOS technology; body effect; capacitance characterisation; parasitic capacitances; submicron MOSFET; CMOS technology; Capacitance measurement; Geometry; MOSFET circuits; Numerical simulation; Parasitic capacitance; Particle measurements; Semiconductor device modeling; Senior members; Solid modeling;
Journal_Title :
Electron Device Letters, IEEE
