Title :
Donor/acceptor nature of radiation-induced interface traps
Author :
McWhorter, P.J. ; Winokur, P.S. ; Pastorek, R.A.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories´ radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation
Keywords :
X-ray effects; electron traps; interface electron states; metal-insulator-semiconductor structures; surface potential; MOS structure; Si-SiO2 structure; acceptor traps; conductance technique; density of interface traps; donor traps; donor/acceptor nature; radiation-hardened technologies; radiation-induced interface traps; surface potential; time constant; Annealing; Capacitance-voltage characteristics; Current measurement; Distortion measurement; Electron traps; Ionizing radiation; Laboratories; MOS devices; Photonic band gap; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
