Donor/acceptor nature of radiation-induced interface traps

Author

McWhorter, P.J. ; Winokur, P.S. ; Pastorek, R.A.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1154

Lastpage

1159

Abstract

The conductance technique is used to study radiation-induced interface-traps on Sandia Laboratories´ radiation-hardened technologies. The density of interface traps, the time constant for interface trap response, and the donor/acceptor nature of the interface traps are investigated. The donor/acceptor nature of interface traps is determined by comparing the theoretical and experimental values of the variance in the conductance peak. Results indicate the presence of both donor and acceptor traps in both parts of the bandgap after irradiation

Keywords

X-ray effects; electron traps; interface electron states; metal-insulator-semiconductor structures; surface potential; MOS structure; Si-SiO₂ structure; acceptor traps; conductance technique; density of interface traps; donor traps; donor/acceptor nature; radiation-hardened technologies; radiation-induced interface traps; surface potential; time constant; Annealing; Capacitance-voltage characteristics; Current measurement; Distortion measurement; Electron traps; Ionizing radiation; Laboratories; MOS devices; Photonic band gap; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25433

Filename

25433