Time-dependent interface trap effects in MOS devices

Author

Boesch, H. Edwin, Jr.

Author_Institution

Harry Diamond Labs., Adelphi, MD, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1160

Lastpage

1167

Abstract

A fast charge-pumping technique was used to measure the radiation-induced buildup of interface traps in MOS structures after exposure to short-pulse irradiation. A strong dependence of the time scale of the late-time buildup (t >10 ms) on the oxide electric field at very early times (10 μs to 0.5 ms) is explained in terms of a positive-ion-drift model. The early-time buildup (t<10 ms) component is examined in detail, and evidence is presented that the early buildup is controlled by transport of holes to the SiO₂/Si interface

Keywords

electron beam effects; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; semiconductor device testing; MOS devices; MOSFET; SiO₂-Si interface; early-time buildup; electron irradiation; fast charge-pumping technique; hole transport; interface traps; late-time buildup; oxide electric field; positive-ion-drift model; radiation-induced buildup; short-pulse irradiation; Charge pumps; Current measurement; Hydrogen; Laboratories; MOS devices; Milling machines; Powders; Predictive models; Process control; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25434

Filename

25434