Title :
New method for determining distribution of interface states in an MIS system
Author :
Yamaguchi, Etsuji ; Kobayashi, Takehiko
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A general formula for the capacitance transient response in an MIS system was developed in order to apply the ICTS (isothermal capacitance transient spectroscopy) technique to an MIS diode. A new spectroscopic measurement method for determining the distribution of interface states is proposed and applied to an InAs MIS diode.
Keywords :
III-V semiconductors; indium compounds; interface electron states; metal-insulator-semiconductor structures; InAs MIS diode; MIS system; capacitance transient response; interface state distribution; isothermal capacitance transient spectroscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820198
