Generic impulse response function for MOS systems and its application to linear response analysis

Author

McLean, F.Barry

Author_Institution

Harry Diamond Labs., Adelphi, MD, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1178

Lastpage

1185

Abstract

A generalized response function is presented that can describe several of the practically important transient-response features of MOS systems. It allows for deviations from strict logarithmic time dependencies yet is mathematically tractable in performing linear response analysis. Fits of the generic response function to experimental data are discussed, including the short-term recovery due to hole transport, the long-term recovery due to trapped hole annealing, and the long-term, time-dependent buildup of interface traps. Analytic results for the convolution integral of linear response theory are derived for a square irradiation pulse, and some simple applications are discussed

Keywords

electron beam effects; hole traps; insulated gate field effect transistors; interface electron states; metal-insulator-semiconductor devices; semiconductor device testing; transient response; MOS systems; MOSFET; electron beam irradiation; generic response function; hole transport; impulse response function; interface traps; ionising radiation; linear response analysis; long-term recovery; short-term recovery; square irradiation pulse; time-dependent buildup; transient-response features; trapped hole annealing; Annealing; Convolution; History; Laboratories; MOS devices; Milling machines; Performance analysis; Powders; Threshold voltage; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25436

Filename

25436