Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates

Author

Shigekawa, N. ; Enoki, T. ; Furuta, T. ; Ito, H.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

16

Issue

11

fYear

1995

Firstpage

515

Lastpage

517

Abstract

Electroluminescence (EL) due to the electron-hole recombination in the channel of InAlAs/InGaAs HEMTs lattice-matched to InP substrates has been measured at room temperature. The carrier temperature extracted from the obtained spectra has been found to be approximately 300 K. It has also been found that the EL comes from a region between the source and the gate by measuring its spatial distribution. These two features imply that holes generated at the drain edge in the channel due to the impact ionization pile up and recombine with the majority electrons between the source and the gate, and agree with results of theoretical analysis.<>

Keywords

III-V semiconductors; aluminium compounds; electroluminescence; electron-hole recombination; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; HEMT; InAlAs-InGaAs-InP; InP; InP substrates; carrier temperature; electroluminescence; electron-hole recombination; impact ionization; lattice-matching; room temperature; Electroluminescence; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Spontaneous emission; Temperature distribution; Temperature measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468285

Filename

468285