Title :
Modified ebers-moll model
Author_Institution :
Technical University of Istanbul, Faculty of Electrical Engineering, Istanbul, Turkey
Abstract :
A new modified Ebers-Moll model is described. The model represents a bipolar transistor accurately in the active operating region at low frequencies. It is therefore suitable for computer-aided nonlinear distortion analysis of transistor amplifiers.
Keywords :
bipolar transistors; semiconductor device models; Ebers-Moll model; bipolar transistor; computer-aided nonlinear distortion analysis; semiconductor device model; transistor amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820200
