High-linearity high-current-drivability Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET using Ga/sub 0.51/In/sub 0.49/P airbridge gate structure grown by GSMBE

Author

Lin, Y.S. ; Lu, S.S. ; Sun, T.P.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

16

Issue

11

fYear

1995

Firstpage

518

Lastpage

520

Abstract

A novel structure Ga/sub 0.51/In/sub 0.49/P/GaAs MISFET with an undoped Ga/sub 0.51/In/sub 0.49/P layer serving as the airbridge between active region and gate pad was first designed and fabricated. Wide and flat characteristics of g/sub m/ and f_max versus drain current or gate voltage were achieved. The device also showed a very high maximum current density (610 mA/mm) and a very high gate-to-drain breakdown voltage (25 V). Parasitic capacitances and leakage currents were minimized by the airbridge gate structure and thus high f_T of 22 GHz and high f_max of 40 GHz for 1 μm gate length devices were attained. To our knowledge, both were the best reported values for 1 μm gate GaAs channel FET´s.

Keywords

III-V semiconductors; MISFET; capacitance; current density; electric breakdown; etching; gallium arsenide; gallium compounds; indium compounds; leakage currents; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; 1 micron; 22 GHz; 25 V; 40 GHz; GSMBE; Ga/sub 0.51/In/sub 0.49/P-GaAs; MISFET; airbridge gate structure; gate-to-drain breakdown voltage; high-current-drivability; maximum current density; microwave power application; undoped Ga/sub 0.51/In/sub 0.49/P layer; Bridge circuits; Current density; Gallium arsenide; Leakage current; MESFETs; MISFETs; Parasitic capacitance; Sun; Voltage; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.468286

Filename

468286