Electron mobility behavior in extremely thin SOI MOSFET´s

Extremely thin-film SOI MOSFET´s with silicon film thickness down to 8 nm have been fabricated without inducing serious source/drain series resistance by employing a gate recessed structure. The influence of extremely thin silicon film on the electron mobility has been experimentally studied. The results show an abrupt mobility decrease in the device with less than 10 nm silicon film thickness. The measured mobility versus effective field below 10 nm silicon film thickness shows that a different scattering mechanism is involved in carrier conduction in 10 nm t/sub si/ region. The reasons for the mobility decrease have been examined from a device simulation and measurements.<>