The development of non-uniform deposition of holes in gate oxides

Author

Freitag, R.K. ; Burke, E.A. ; Dozier, C.M. ; Brown, D.B.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1203

Lastpage

1207

Abstract

The subthreshold technique was used to study irradiated MOS transistors at 80 K. Stretchout of the subthreshold curve demonstrated production of lateral nonuniformities (LNUs) in the hole distribution. The LNUs were analyzed in terms of a parallel transistor model and the statistics of the nonuniform distribution of dose deposition in the SiO ₂. The results confirm the hypothesis that at 80 K the principal source of LNUs is the granularity in dose deposition. The relative standard deviation for the deposited dose is large for thin oxides, for 10 keV X-rays (as opposed to Co-60), and at low doses. These physical phenomena are predicted to have a significant effect at room temperature

Keywords

X-ray effects; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; 10⁴ to 3.2×10⁵ rad; 80 K; MOS transistors; Si-SiO₂; X-ray irradiation; dose distribution granularity; gate oxides; lateral nonuniformities; nonuniform hole deposition; parallel transistor model; standard deviation; subthreshold curve; subthreshold technique; Annealing; Interface states; Laboratories; MOSFETs; Physics; Pollution measurement; Production; Statistical analysis; Statistical distributions; X-rays;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25440

Filename

25440