DocumentCode :
1000644
Title :
High-frequency intensity noise behaviour during accelerated life tests of narrow-stripe proton-isolated DH AlGaAs lasers for optical communications
Author :
Biesterbos, J.W.M. ; Salemink, H.W.M.
Author_Institution :
Philips Research Laboratories, Eindhoven, Netherlands
Volume :
18
Issue :
7
fYear :
1982
Firstpage :
300
Lastpage :
302
Abstract :
An investigation has been made into the influence of life testing of narrow-stripe proton-isolated DH AlGaAs on their output fluctuation spectra in the range 0.1¿1.6 GHz. The lasers show intrinsic optical fluctuation behaviour before life testing. The experiments indicate that this behaviour is maintained for facet-coated lasers during at least 5000 h of accelerated life testing at elevated temperatures.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; life testing; optical communication equipment; semiconductor device testing; semiconductor junction lasers; 0.1 to 1.6 GHz; accelerated life tests; facet-coated lasers; high frequency intensity noise behaviour; narrow stripe laser; optical communications; output fluctuation spectra; proton-isolated DH AlGaAs lasers; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820205
Filename :
4249663
Link To Document :
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