Title :
Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K
Author :
Takeda, Y. ; Kamei, H. ; Sasaki, A.
Author_Institution :
Kyoto University, Department of Electrical Engineering, Kyoto, Japan
Abstract :
Electron concentration and undoped AlGaAs spacer thickness dependencies of the mobility of a two-dimensional electron gas in a GaAs/AlGaAs single heterostructure are calculated at 4.2 K. The results predict extremely high electron mobility in this structure and agree quite well with very recent experimental data.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; electron gas; gallium arsenide; p-n heterojunctions; 4.2 K; GaAs-AlGaAs heterostructure; electron mobility; mobility; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820211
