DocumentCode
1000740
Title
Phenomenological model for the BIAX
Author
Nistler, P.J. ; Korkowski, V.J.
Author_Institution
UNIVAC, St. Paul, MN, USA
Volume
1
Issue
4
fYear
1965
fDate
12/1/1965 12:00:00 AM
Firstpage
292
Lastpage
295
Abstract
This paper describes a model developed for the operation of the BIAX as applicable to an NDRO memory system. The role of a field transverse to the storage direction during writing is described. Factors contributing to the output and to the back voltage are pointed out to explain the ratio observed between these two. These individual contributions arise from rotation of the magnetization vector and changes in the dispersion angle during interrogation. A mechanical analogy is presented for the asymmetry of the NDRO observed under high-speed operation.
Keywords
NDRO memories; Apertures; Demagnetization; Ferrites; Geometry; Magnetic flux; Magnetic materials; Magnetic moments; Material storage; Saturation magnetization; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1965.1062978
Filename
1062978
Link To Document