Title :
High-peak-power picosecond optical pulse generation from highly RF-modulated InGaAsP DH diode laser
Author :
Onodera, Naoyuki ; Ito, H. ; Inaba, Hiromi
Author_Institution :
Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
Abstract :
The feasibility for generating high-peak-power ultrashort optical pulses was demonstrated from a highly RF-modulated InGaAsP DC-PBH laser diode at 1.3 ¿m for the first time. Measured pulse width is found to be approximately 28 ps at 7 mW averaged output power, and peak output power reached about 1.2 W at 210 MHz repetition frequency. Higher peak output and shorter optical pulses could be expected with this type of semiconductor diode laser in the near-infra-red region.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; 1.3 micron; 210 MHz; III-V semiconductors; InGaAsP DH diode laser; RF modulation; picosecond optical pulse generation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820551
