DocumentCode
1000892
Title
The state-of-the-art in SOI technology
Author
Stanley, T.D.
Author_Institution
Defense Nucl. Agency, Alexandria, VA, USA
Volume
35
Issue
6
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
1346
Lastpage
1349
Abstract
The advantages of silicon-on-insulator (SOI) device structures over bulk silicon structures are summarized. The leading SOI fabrication methods are surveyed, and their current development status is discussed. The future of SOI for submicron (<0.5 μm) production is assessed
Keywords
VLSI; integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; 0.5 micron; SOI fabrication methods; SOI technology; development status; radiation hardened electronics; state-of-the-art; submicron; CMOS technology; Circuits; Costs; Dielectrics; Electrons; Fabrication; Isolation technology; Manufacturing; Silicon; Throughput;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.25462
Filename
25462
Link To Document