Title :
The state-of-the-art in SOI technology
Author_Institution :
Defense Nucl. Agency, Alexandria, VA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
The advantages of silicon-on-insulator (SOI) device structures over bulk silicon structures are summarized. The leading SOI fabrication methods are surveyed, and their current development status is discussed. The future of SOI for submicron (<0.5 μm) production is assessed
Keywords :
VLSI; integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; 0.5 micron; SOI fabrication methods; SOI technology; development status; radiation hardened electronics; state-of-the-art; submicron; CMOS technology; Circuits; Costs; Dielectrics; Electrons; Fabrication; Isolation technology; Manufacturing; Silicon; Throughput;
Journal_Title :
Nuclear Science, IEEE Transactions on
