The use of multiple oxygen implants for fabrication of bipolar silicon-on-insulator integrated circuits

Author

Platteter, Dale G. ; Cheek, Tom F., Jr.

Author_Institution

US Naval Weapons Support Center, Crane, IN, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1350

Lastpage

1354

Abstract

A description is given of the radiation improvements obtained by fabricating bipolar integrated circuits on oxygen-implanted silicon-on-insulator substrates that were manufactured with multiple (low-dose) implants. Bipolar 74ALS00 gates fabricated on these substrates showed an improvement in total dose and dose-rate radiation response over identical circuits fabricated in bulk silicon. Defects in SIMOX material were reduced by over four orders of magnitude. The results demonstrate that bipolar devices, fabricated on multiple-implant SIMOX substrates, can compete with conventional dielectric isolation for many radiation-hardened system applications

Keywords

bipolar integrated circuits; integrated circuit technology; ion implantation; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; transistor-transistor logic; 74ALS00 gates; SIMOX material; SOI ICs; SOI substrates; TTL; bipolar integrated circuits; dielectric isolation; fabrication; multiple-implant SIMOX substrates; radiation hardened electronics; radiation improvements; radiation-hardened system; silicon-on-insulator integrated circuits; Annealing; Bipolar integrated circuits; Dielectric substrates; Dielectrics and electrical insulation; Fabrication; Implants; Instruments; Oxygen; Scanning electron microscopy; Silicon on insulator technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25463

Filename

25463