Theoretical studies of electronic conduction and optical generation mechanisms in the double-heterostructure optoelectronic switch (DOES)

Author

Simmonds, J.G. ; Taylor, Geoffrey W.

Author_Institution

Dept. of Electr. Eng., Bradford Univ., UK

Volume

35

Issue

8

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1269

Lastpage

1278

Abstract

The effects of other physical properties on the electrical and optical properties of the double-heterostructure optoelectronic switch device are calculated. The device is similar to an earlier version, but the charge sheet responsible for the unique electrical and optical switching properties of the device is placed in the wide-bandgap barrier layer rather than in the narrow-bandgap active layer. This generally improves the overall operating characteristics of the device because in principle it allows higher charge sheet doping values. This is possible because the charge sheet remains ionized even for very high inversion channel densities

Keywords

integrated optoelectronics; optoelectronic devices; semiconductor device models; semiconductor switches; (DOES); charge sheet; double-heterostructure optoelectronic switch; electrical switching properties; electronic conduction; high inversion channel densities; higher charge sheet doping values; operating characteristics; optical generation mechanisms; optical properties; optical switching properties; physical properties; wide-bandgap barrier layer; Charge carrier processes; Current density; Doping; Heterojunctions; Mechanical factors; Optical devices; Optical switches; P-n junctions; Spontaneous emission; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2547

Filename

2547