• DocumentCode
    1000997
  • Title

    Increasing IATO in TIL GTO thyristors

  • Author

    Silard, A.P.

  • Author_Institution
    Polytechnic Institute, Department of Electronics, Bucharest, Romania
  • Volume
    20
  • Issue
    3
  • fYear
    1984
  • Firstpage
    130
  • Lastpage
    132
  • Abstract
    The work reports the development of a 4×4 mm-area TIL GTO switch with a maximum controllable anode current IATO = 45 A, which exceeds by 80% the peak reported value in the literature for this class of GTOs. The maximum turn-off gain obtainable in the vicinity of IATO is Koff = 17. The mechanisms underlying this drastic boost of IATO and the broad implications of reported results are outlined in the letter.
  • Keywords
    semiconductor switches; thyristors; GTO thyristors; TIL power switch; controllable anode current; gate turn-off type; maximum turn-off gain; semiconductor switches; two interdigitation levels;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840088
  • Filename
    4249699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1000997