Title :
Increasing IATO in TIL GTO thyristors
Author_Institution :
Polytechnic Institute, Department of Electronics, Bucharest, Romania
Abstract :
The work reports the development of a 4Ã4 mm-area TIL GTO switch with a maximum controllable anode current IATO = 45 A, which exceeds by 80% the peak reported value in the literature for this class of GTOs. The maximum turn-off gain obtainable in the vicinity of IATO is Koff = 17. The mechanisms underlying this drastic boost of IATO and the broad implications of reported results are outlined in the letter.
Keywords :
semiconductor switches; thyristors; GTO thyristors; TIL power switch; controllable anode current; gate turn-off type; maximum turn-off gain; semiconductor switches; two interdigitation levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840088