DocumentCode :
1000997
Title :
Increasing IATO in TIL GTO thyristors
Author :
Silard, A.P.
Author_Institution :
Polytechnic Institute, Department of Electronics, Bucharest, Romania
Volume :
20
Issue :
3
fYear :
1984
Firstpage :
130
Lastpage :
132
Abstract :
The work reports the development of a 4×4 mm-area TIL GTO switch with a maximum controllable anode current IATO = 45 A, which exceeds by 80% the peak reported value in the literature for this class of GTOs. The maximum turn-off gain obtainable in the vicinity of IATO is Koff = 17. The mechanisms underlying this drastic boost of IATO and the broad implications of reported results are outlined in the letter.
Keywords :
semiconductor switches; thyristors; GTO thyristors; TIL power switch; controllable anode current; gate turn-off type; maximum turn-off gain; semiconductor switches; two interdigitation levels;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840088
Filename :
4249699
Link To Document :
بازگشت