• DocumentCode
    10010
  • Title

    Insulation Resistance and Leakage Currents in Low-Voltage Ceramic Capacitors With Cracks

  • Author

    Teverovsky, Alexander

  • Author_Institution
    ASRC Fed. Space & Defence, Greenbelt, MD, USA
  • Volume
    4
  • Issue
    7
  • fYear
    2014
  • fDate
    Jul-14
  • Firstpage
    1169
  • Lastpage
    1176
  • Abstract
    Measurement of insulation resistance (IR) in multilayer ceramic capacitors (MLCCs) is considered a screening technique that ensures the dielectric is defect-free. This paper analyzes the effectiveness of this technique for revealing cracks in ceramic capacitors. It is shown that absorption currents prevail over the intrinsic leakage currents during standard IR measurements at room temperature. Absorption currents, and consequently IR, have a weak temperature dependence, increase linearly with voltage (before saturation), and are not sensitive to the presence of mechanical defects. On the contrary, intrinsic leakage currents increase super-linearly with voltage and exponentially with temperature (activation energy is in the range from 0.6 to 1.1 eV). Leakage currents associated with the presence of cracks have a weaker dependence on temperature and voltage compared with the intrinsic leakage currents. For this reason, intrinsic leakage currents prevail at high temperatures and voltages, thus masking the presence of defects.
  • Keywords
    ceramic capacitors; cracks; leakage currents; absorption currents; activation energy; cracks; electron volt energy 0.6 eV to 1.1 eV; insulation resistance measurement; intrinsic leakage currents; mechanical defects; multilayer ceramic capacitors; room temperature; Absorption; Capacitance; Capacitors; Current measurement; Leakage currents; Temperature measurement; Voltage measurement; Ceramic capacitors; crack detection; dielectric polarization; insulation testing; leakage current; testing; testing.;
  • fLanguage
    English
  • Journal_Title
    Components, Packaging and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    2156-3950
  • Type

    jour

  • DOI
    10.1109/TCPMT.2014.2318178
  • Filename
    6817589