Title :
Evidence of bandgap-narrowing in the space-charge layer of heavily doped silicon diodes
Author :
Lowney, J.R. ; Thurber, W.R.
Author_Institution :
National Bureau of Standards, Semiconductor Materials & Processes Division, Washington, USA
Abstract :
The gradient voltage has been measured for seven heavily doped, graded-junction silicon diodes at 300 K. Experimental values up to nearly 0.5 V lower than conventional theoretical predictions have been observed. The lowering is attributed to bandgap-narrowing in the space-charge region. This narrowing is expected to be much larger than in neutral material of the same doping density because of the absence of free-carrier screening.
Keywords :
elemental semiconductors; heavily doped semiconductors; p-n homojunctions; semiconductor diodes; semiconductor doping; silicon; space charge; 300K; Bandgap-narrowing; Si diodes; elemental semiconductor; graded-junction; gradient voltage; heavy doping; space-charge layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840096
