Title :
Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode
Author :
Mishra, Umesh ; Maki, P.A. ; Wendt, J.R. ; Schaff, W. ; Kohn, Erhard ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, Ithaca, USA
Abstract :
We wish to report on the successful fabrication of submicrometre channel length (0.75 ¿m) and gate length (0.15 ¿m) vertical electron transistors with AlGaAs cathodes. Lack of electron velocity enhancement has been proposed to be due to high operating channel temperatures, and low temperature measurements were hindered by carrier freeze-out.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; solid-state microwave devices; AlGaAs cathodes; AlGaAs-GaAs; FET; GaAs; III-V semiconductors; VET; carrier freeze-out; electron velocity enhancement; fabrication; gate length; high operating channel temperatures; n-n heterojunction; solid-state microwave devices; source structure; submicrometre channel length; vertical electron transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840098
