• DocumentCode
    1001095
  • Title

    Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode

  • Author

    Mishra, Umesh ; Maki, P.A. ; Wendt, J.R. ; Schaff, W. ; Kohn, Erhard ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    20
  • Issue
    3
  • fYear
    1984
  • Firstpage
    145
  • Lastpage
    146
  • Abstract
    We wish to report on the successful fabrication of submicrometre channel length (0.75 ¿m) and gate length (0.15 ¿m) vertical electron transistors with AlGaAs cathodes. Lack of electron velocity enhancement has been proposed to be due to high operating channel temperatures, and low temperature measurements were hindered by carrier freeze-out.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; solid-state microwave devices; AlGaAs cathodes; AlGaAs-GaAs; FET; GaAs; III-V semiconductors; VET; carrier freeze-out; electron velocity enhancement; fabrication; gate length; high operating channel temperatures; n-n heterojunction; solid-state microwave devices; source structure; submicrometre channel length; vertical electron transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840098
  • Filename
    4249709
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001095