Title :
Ferroelectric memories: a possible answer to the hardened nonvolatile question
Author :
Messenger, George C. ; Coppage, Floyd N.
Author_Institution :
R&D Associates, Marina del Rey, CA, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Ferroelectric memory cells were fabricated using a process compatible with semiconductor VLSI manufacturing techniques that are basically nonvolatile and radiation-hard. The memory can be made NDRO (nondestructive readout) for strategic systems using several techniques, the most practical being a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power, and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems
Keywords :
CMOS integrated circuits; VLSI; ferroelectric devices; integrated circuit technology; integrated memory circuits; radiation hardening (electronics); random-access storage; semiconductor technology; EDAC software; NDRO; NVRAM; ferroelectric memories; nondestructive readout; nonvolatile RAM; plated wire replacement; practical cost-competitive solution; process compatible with semiconductor VLSI manufacturing; radiation hardened electronics; rapid read/restore; replace plated wire; strategic systems; Aerospace electronics; Costs; Ferroelectric materials; Manufacturing processes; Nonvolatile memory; Power system restoration; Random access memory; Semiconductor device manufacture; Very large scale integration; Wire;
Journal_Title :
Nuclear Science, IEEE Transactions on
