Title :
InP/InGaAs buried-structure avalanche photodiodes
Author :
Yasuda, Kazuhiro ; Kishi, Y. ; Shirai, Tokimasa ; Mikawa, T. ; Yamazaki, Shumpei ; Kaneda, Tadahiro
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Planar InP/InGaAs avalanche photodiodes with a new guardring structure have been designed and fabricated. The diodes had a buried n-InP layer and an n¿-InP multiplication region under p-n junctions. A successful guardring effect was obtained. The diode exhibited a uniform multiplication over the active region, a maximum multiplication factor of 30, low dark currents of around 20 nA at 90% of breakdown voltage and a flat frequency response up to 1 GHz. Multiplication noise was measured up to a multiplication factor of 17.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; III-V semiconductors; InP/InGaAs avalanche photodiodes; buried n-InP layer; dark currents; flat frequency response; guarding structure; maximum multiplication factor; n--InP multiplication region; uniform multiplication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840106
