Title :
Liquid-phase-epitaxial growth of Inp/InGaAsP/InGaAs buried-structure avalanche photodiodes
Author :
Kishi, Y. ; Yasuda, Kazuhiro ; Yamazaki, Shumpei ; Nakajima, Kensuke ; Umebu, I.
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
An InP/InGaAsP/InGaAs avalanche photodiode with an effective guard-ring structure has been successfully fabricated. The diode has a planar structure with an n-InP layer buried by n¿-InP in the multiplication region The structure has been grown on a (111)A-oriented InP substrate by two-step growth of liquid-phase epitaxy. Prior to the second growth of n¿-InP a meltback technique was used to reduce dark current.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; III-V semiconductors; InP substrate; InP/InGaAsP/InGaAs avalanche photodiode; dark current; guard-ring structure; liquid-phase epitaxy; meltback technique; multiplication region; planar structure; two-step growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840111
