Title :
A C-band high-dynamic range GaN HEMT low-noise amplifier
Author :
Xu, Hongtao ; Sanabria, Christopher ; Chini, Alessandro ; Keller, Stacia ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA
fDate :
6/1/2004 12:00:00 AM
Abstract :
A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4-8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the input port. Compared to circuits based on other material and technology, the circuit shows comparable noise figure with improved dynamic range and survivability.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; gallium compounds; 1.6 dB; 10.9 dB; 4 to 8 GHz; C-band high-dynamic range; C-band low-noise amplifier; GaN; GaN HEMT; broadband operation; high electron-mobility transistor; noise figure; one-stage amplifier; power devices; Broadband amplifiers; Circuits; Dynamic range; Gain measurement; Gallium nitride; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Operational amplifiers; GaN; HEMT; LNA; high electron-mobility transistor; high linearity; low-noise amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2004.828020
