Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs

Author

Schrimpf, R.D. ; Wahle, P.J. ; Andrews, R.C. ; Cooper, D.B. ; Galloway, K.F.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1536

Lastpage

1540

Abstract

Radiation-hardened and -unhardened n-channel power MOSFETs were tested at dose rates approaching space-radiation levels. The hardened parts exhibited large superrecovery effects during and after very low total doses of ionizing radiation. The superrecovery was attributed to in situ interface-trap formation. These positive threshold shifts and the accompanying interface traps can reduce current-drive capability in power MOSFETs. The impact on space-system use is discussed. The threshold-voltage shift of the positively biased unhardened parts was dominated by generation of oxide trapped charge at all dose-rates; the threshold voltage of these parts decreased monotonically at all doses and dose rates examined

Keywords

gamma-ray effects; insulated gate field effect transistors; power transistors; radiation hardening (electronics); reliability; semiconductor device testing; semiconductor technology; current drive capability effects; dose rate effects; gamma-ray effects; interface traps; interface-trap formation; low total doses of ionizing radiation; oxide trapped charge; positive threshold shifts; positively biased unhardened parts; power MOSFETs; radiation hardness testing; space-radiation levels; superrecovery effects; total-dose threshold-voltage shift; Annealing; Bipolar transistors; Electron traps; FETs; Ionizing radiation; MOSFETs; Packaging; Radiation hardening; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25493

Filename

25493