Radiation effects on power integrated circuits

Author

Darwish, Mohamed N. ; Dolly, Martin C. ; Goodwin, Charles A. ; Titus, Jeffrey L.

Author_Institution

AT&T Bell Lab., Reading, PA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1547

Lastpage

1551

Abstract

A study was initiated to investigate the effects of gamma (total ionizing dose), prompt gamma (gamma-dot), and neutron radiation on commercially available power integrated circuits. A dielectric-isolated bipolar-CMOS-DMOS (BCDMOS) technology was selected for this characterization. Total-ionizing-dose testing resulted in device failure at 30 krad(Si). Gamma-dot testing (30-ns pulsewidth) resulted in device failure due to transient upset of the CMOS logic at 10⁹ rads(Si)/s. Neutron testing resulted in severe degradation in performance, but devices remained functional after receiving a fluence of 2×10¹⁴ n/cm². An attempt was made to harden the BCDMOS technology to gamma radiation

Keywords

gamma-ray effects; integrated circuit technology; integrated circuit testing; neutron effects; power integrated circuits; radiation hardening (electronics); semiconductor technology; 30 ns; 3E4 rad; BCDMOS; CMOS logic; bipolar-CMOS-DMOS; characterization; commercially available power integrated circuits; dielectric isolation; gamma radiation; gamma-dot; neutron radiation; prompt gamma; radiation hardness testing; total ionizing dose; transient upset; CMOS technology; Circuit testing; Dielectrics; Integrated circuit technology; Ionizing radiation; Logic testing; Neutrons; Power integrated circuits; Radiation effects; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25495

Filename

25495