Title :
Influence of growth conditions on deep levels in molecular-beam-epitaxial GaAs
Author :
Amano, C. ; Shibukawa, Atsushi ; Ando, K. ; Yamaguchi, Masaki
Author_Institution :
NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
Abstract :
Molecular-bearn-epitaxially grown undoped GaAs layers are studied with regard to the relation between growth conditions and deep-level trap generation. Both carrier concentration and electron trap density have a minimum value in samples grown at close to the minimum As/Ga flux ratio under As-stabilised conditions. Growth under these conditions leads to suppression of defect generation and unintentional impurity incorporation.
Keywords :
III-V semiconductors; deep levels; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; III-V semiconductors; MBE; carrier concentration; deep-level trap generation; defect generation; electron trap density; flux ratio; growth conditions; undoped GaAs layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840116
