Title :
Processing and circuit design enhance a data converter´s radiation tolerance
Author :
Heuner, Robert ; Zazzu, Victor ; Pennisi, Louis
Author_Institution :
GE Solid State, Somerville, NJ, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
Radiation-hard CMOS/SOS processing was applied to a novel comparator-invertor circuit design to develop 6- and 8-bit parallel circuits featuring high-speed operation, low power consumption, and total-dose radiation tolerance up to 1 Mrad(Si). The heart of the radiation tolerant ADC design is a novel CMOS autozero comparator. The autozero function serves to eliminate any comparator offset. The comparator design is also tolerant of voltage threshold variations associated with total-dose radiation
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); integrated circuit technology; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; 1E6 rad; 6 bit; 8 bit; 8-bit parallel circuits; CMOS autozero comparator; CMOS/SOS processing; Si-Al2O3; Si-SiO2; autozero function; circuit design; comparator design; high-speed operation; low power consumption; novel comparator-invertor circuit design; radiation hardness; radiation tolerance; radiation tolerant ADC; tolerant of voltage threshold variations; total-dose radiation tolerance; Capacitors; Circuit synthesis; Clocks; Couplings; Diodes; Inverters; Leakage current; Sampling methods; Threshold voltage; Variable structure systems;
Journal_Title :
Nuclear Science, IEEE Transactions on
