• DocumentCode
    1001305
  • Title

    Electron beam annealing of zinc implanted GaAs to control profile broadening

  • Author

    Barrett, N.J. ; Sealy, B.J.

  • Author_Institution
    GEC Research Laboratories, Hirst Research Centre, Wembley, UK
  • Volume
    20
  • Issue
    4
  • fYear
    1984
  • Firstpage
    175
  • Lastpage
    177
  • Abstract
    Highly doped P+ layers have been obtained by using multiply scanned electron beam annealing. The diffusion of the zinc was controllable at temperatures above 900°C if anneal times were less than 3 s.
  • Keywords
    III-V semiconductors; annealing; doping profiles; electron beam effects; gallium arsenide; ion implantation; semiconductor doping; zinc; GaAs:Zn highly-doped p+ layers; anneal times; multiply scanned electron beam annealing; profile broadening;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840117
  • Filename
    4249729
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1001305