Title :
Electron beam annealing of zinc implanted GaAs to control profile broadening
Author :
Barrett, N.J. ; Sealy, B.J.
Author_Institution :
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Abstract :
Highly doped P+ layers have been obtained by using multiply scanned electron beam annealing. The diffusion of the zinc was controllable at temperatures above 900°C if anneal times were less than 3 s.
Keywords :
III-V semiconductors; annealing; doping profiles; electron beam effects; gallium arsenide; ion implantation; semiconductor doping; zinc; GaAs:Zn highly-doped p+ layers; anneal times; multiply scanned electron beam annealing; profile broadening;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840117
