Title :
Three-channel buried-crescent InGaAsP laser with 1.51 ¿m wavelength on semi-insulating InP
Author :
Koren, U. ; Arai, Shigehisa ; Tien
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
Laser diodes with current threshold as low as 16 mA for lasers of 300 ¿m length and channel width of 2¿3 ¿m were obtained with operational wavelength of 1.51 ¿m. These lasers are fabricated with one liquid-phase-epitaxy growth step and a lateral zinc diffusion process. Current confinement is achieved by use of the semi-insulating substrate material.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; 1.51 microns wavelength; III-V semiconductors; buried-crescent InGaAsP laser; channel width; current confinement; current threshold; lateral diffusion process; liquid-phase-epitaxy growth step; operational wavelength; semiconductor junction lasers; semiinsulating substrate material;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840118
