Analytic SEU rate calculation compared to space data

Author

Binder, Daniel

Author_Institution

Hughes Aircraft Co., Los Angeles, CA, USA

Volume

35

Issue

6

fYear

1988

fDate

12/1/1988 12:00:00 AM

Firstpage

1570

Lastpage

1572

Abstract

A method is described for deriving analytic expressions for single-event-upset rates in space. The method is applicable to semiconductor devices with sensitive volumes approximating a thin lamina. The approximation applies to a large majority of devices in use today. The method replaces more complicated calculations involving chord distributions without any loss in rigor. The results agree with satellite data for the 93L422, the 54L78, and an NMOS RAM used in the Global Positioning Satellite

Keywords

bipolar integrated circuits; field effect integrated circuits; integrated circuit technology; integrated circuit testing; integrated logic circuits; integrated memory circuits; radiation hardening (electronics); random-access storage; semiconductor technology; 54L78; 93L422; GPS; Global Positioning Satellite; NMOS RAM; SEU rate calculation; analytic expressions; majority of devices; radiation hardness; satellite data; semiconductor devices; sensitive volumes; single-event-upset rates in space; space data; thin lamina; Aircraft; Cyclotrons; Equations; MOS devices; Satellites; Semiconductor devices; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.25499

Filename

25499