Title :
A theoretical study of transducer noise in piezoresistive and capacitive silicon pressure sensors
Author :
Spender, R.R. ; Fleischer, Bruce M. ; Barth, Phillip W. ; Angell, James B.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
fDate :
8/1/1988 12:00:00 AM
Abstract :
An analysis of the effect of noise introduced by the transduction process on the minimum detectable signal (MDS) of piezoresistive and capacitive pressure sensors has been performed. MDS is first introduced as an appropriate figure of merit for comparing different sensor transduction schemes. Analyses are then performed to determine the minimum MDS theoretically achievable for a broad range of generic transducer circuits. The results of the analyses indicate that noise in the transduction process is not a limiting factor in the performance of properly designed integrated silicon sensors
Keywords :
electric sensing devices; electron device noise; elemental semiconductors; piezoelectric transducers; pressure transducers; semiconductor device models; silicon; capacitive pressure sensors; figure of merit; generic transducer circuits; integrated Si sensors; minimum detectable signal; piezoresistive pressure sensors; sensor transduction schemes; theoretical study; transducer noise; Capacitance measurement; Capacitive sensors; Circuit noise; Electrical resistance measurement; Noise measurement; Performance analysis; Piezoresistance; Signal detection; Silicon; Transducers;
Journal_Title :
Electron Devices, IEEE Transactions on