DocumentCode
1001365
Title
Investigation of single-event upset (SEU) in an advanced bipolar process
Author
Zoutendyk, John A. ; Secrest, Elaine C. ; Berndt, Dale F.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
35
Issue
6
fYear
1988
fDate
12/1/1988 12:00:00 AM
Firstpage
1573
Lastpage
1577
Abstract
An extensive analytical and experimental study of SEU in an advanced silicon bipolar process was made. The modeling used process and device parameters to model the SEU charge, collection, and circuit response derived from a special version of PISCES in cylindrical coordinates and SPICE, respectively. Data are reported for test cells of various sizes
Keywords
bipolar integrated circuits; circuit analysis computing; integrated circuit technology; radiation hardening (electronics); semiconductor technology; PISCES; SPICE; Si; analytical study; bipolar process; circuit response; cylindrical coordinates; device parameters; experimental study; model; process parameters; radiation hardness; single-event upset; test cells; Circuit simulation; Circuit testing; Discrete event simulation; Flip-flops; Geometry; Pulse circuits; SPICE; Semiconductor device measurement; Silicon; Single event upset;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.25500
Filename
25500
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