DocumentCode :
1001380
Title :
Use of MOS transistor as a tunable distributed RC filter element
Author :
Khoury, Joud ; Tsividis, Yannis ; Banu, Mihai
Author_Institution :
Columbia University, Department of Electrical Engineering, New York, USA
Volume :
20
Issue :
4
fYear :
1984
Firstpage :
187
Lastpage :
188
Abstract :
The use of the MOS transistor as a tunable distributed RC transmission line is suggested. It is demonstrated that the structure is satisfactorily tunable through its gate voltage, even in the presence of worst-case fabrication processing and temperature variations.
Keywords :
active filters; distributed parameter networks; field effect integrated circuits; insulated gate field effect transistors; MOS transistor; gate voltage; temperature variations; tunable distributed RC transmission line; worst-case fabrication processing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840125
Filename :
4249737
Link To Document :
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