Title :
Physical SEU model for circuit simulations
Author :
Peczalski, Andrzej ; Bergman, John ; Berndt, D. ; Lai, James C.
Author_Institution :
Honeywell Syst. & Res. Center, Minneapolis, MN, USA
fDate :
12/1/1988 12:00:00 AM
Abstract :
A single-event-upset (SEU) model of a bipolar transistor based on device and ion-track physical parameters has been incorporated into standard SPICE. The model can predict the current/voltage waveforms of SEU in bipolar transistors and flip-flops. This model has been experimentally verified for bipolar transistors in several configurations under many bias conditions and subjected to more than five ion types (Kr, Br, Ar, N, He, etc.). The experimental SEU thresholds of six different flip-flops also agree within 50% of the simulations
Keywords :
alpha-particle effects; argon; bipolar integrated circuits; bipolar transistors; bromine; circuit analysis computing; flip-flops; helium; ion beam effects; krypton; nitrogen; radiation hardening (electronics); semiconductor device models; Ar ions; Br ions; He ions; Kr ions; N ions; alpha particles; bias conditions; bipolar transistor; circuit simulations; current/voltage waveforms; device parameters; experimental SEU thresholds; flip-flops; ion types; ion-track physical parameters; physical SEU models; single-event-upset; standard SPICE; Analytical models; Bipolar transistors; Circuit simulation; Computational modeling; Computer simulation; Equations; Flip-flops; Resistors; SPICE; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
